SST441 SOIC 8L

U/SST440, 441 WIDEBAND HIGH GAIN MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 CMRR ≥ 85dB HIGH CMRR IGSS ≤ 1pA LOW GATE LEAKAGE ABSOLUTE MAXIMUM RATINGS1 U SERIES TO-71 TOP VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation @ TA = 25°C Continuous Power Dissipation (Total) 500mW Maximum Currents Gate Current SST SERIES SOIC TOP VIEW S1 1 8 NC D1 2 7 G2 G1 3 6 D2 NC 4 5 S2 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V Gate to Gate ±50V MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC VGS1 − VGS2 Differential Gate to Source Cutoff Voltage Δ VGS1 − VGS2 ΔT IDSS1 IDSS2 gfs1 gfs2 CMRR MIN TYP MAX UNITS U/SST440 10 U/SST441 20 Differential Gate to Source Cutoff Voltage Change with Temperature 20 CONDITIONS mV VDG = 10V, ID = 5mA µV/°C VDG = 10V, ID = 5mA TA = -55 to +125°C Gate to Source Saturation Current Ratio3 0.98 VDS = 10V, VGS = 0V Forward Transconductance Ratio2 0.97 VDS = 10V, ID = 5mA, f = 1kHz Common Mode Rejection Ratio 85 dB VDG = 5 to 10V, ID = 5mA ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL ss CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage -25 VGS(off) TYP MAX UNITS CONDITIONS V IG = -1µA, VDS = 0V Gate to Source Cutoff Voltage -1 -3.5 -6 V VDS = 10V, ID = 1nA IDSS Gate to Source Saturation Current2 6 15 30 mA VDS = 10V, VGS = 0V IGSS Gate Leakage Current -1 -500 IG Gate Operating Current -1 -500 Linear Integrated Systems • pA VGS = -15V, VDS = 0V VDG = 10V, ID = 5mA 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201125 07/24/19 Rev#A4 ECN# U SST 440_441 ELECTRICAL CHARACTERISTICS CONTINUED @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP gfs Forward Transconductance 4.5 6 MAX UNITS 9 mS gos Output Conductance 70 200 µS Ciss Input Capacitance 3 Crss Reverse Transfer Capacitance 1 en Equivalent Input Noise Voltage 4 CONDITIONS VDS = 10V, ID = 5mA, f = 1kHz pF VDS = 10V, ID = 5mA, f = 1MHz nV/√Hz VDS = 10V, ID = 5mA, f = 10kHz SOIC 0.014 0.018 0.021 1 8 2 7 3 6 4 5 0.150 0.157 0.0075 0.0098 0.050 0.189 0.196 0.0040 0.0098 0.2284 0.2440 DIMENSIONS IN INCHES NOTES: 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201125 07/24/19 Rev#A4 ECN# U SST 440_441